NJX1675PDR2G ON Semiconductor, NJX1675PDR2G Datasheet - Page 7

• Manufacturer Part Number: NJX1675PDR2G
• Description: IC TRANS NPN/PNP COMP 30V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NJX1675PDR2G

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 115mV @ 200mA, 2A, 170mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 1A, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz, 120MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

350
300
250
200
150
100
0
1
V
Figure 16. Input Capacitance
EB
, EMITTER BASE VOLTAGE (V)
2
C
ibo
0.001
3
(pF)
0.01
1.0
0.1
10
0.01
Single Pulse Test at T
PNP TYPICAL CHARACTERISTICS
4
Figure 18. Safe Operating Area
5
0.1
http://onsemi.com
6
A
V
= 25C
7
CE
1.0
1 s
(V
Thermal Limit
dc
100
90
80
70
60
50
40
30
)
0
10
5
V
cb
Figure 17. Output Capacitance
C
, COLLECTOR BASE VOLTAGE (V)
obo
100 ms
10
10 ms
1 ms
(pF)
100
15
20
25
30
35
40