ML610Q412P-NNNTB03A7 Rohm Semiconductor, ML610Q412P-NNNTB03A7 Datasheet - Page 33

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ML610Q412P-NNNTB03A7

Manufacturer Part Number
ML610Q412P-NNNTB03A7
Description
MCU 8BIT 16K FLASH 120-TQFP
Manufacturer
Rohm Semiconductor

Specifications of ML610Q412P-NNNTB03A7

Core Processor
nX-U8/100
Core Size
8-Bit
Speed
625kHz
Connectivity
I²C, SSP, UART/USART
Peripherals
LCD, POR, PWM, WDT
Number Of I /o
14
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
1.1 V ~ 3.6 V
Data Converters
A/D 2x12b, 2x24b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ML610Q412P-NNNTB03A7
Manufacturer:
ROHM
Quantity:
750
Part Number:
ML610Q412P-NNNTB03A7
Manufacturer:
Rohm Semiconductor
Quantity:
10 000
Electrical Characteristics of Successive Approximation Type A/D Converter
OKI Semiconductor
Resolution
Integral non-linearity error
Differential non-linearity error
Zero-scale error
Full-scale error
Reference voltage
Conversion time
φ: Period of high-speed clock (HSCLK)
*
(V
1
: 2φ / CH is required as an interval time for each conversion in the case of consecutive A/D conversion.
DD
= 1.8 to 3.6V, AV
1μF
Parameter
A
DD
= 2.2 to 3.6V, V
Reference
voltage
Analog input
SS
Symbol
= AV
t
DNL
V
V
FSE
CONV
IDL
OFF
REF
n
+
SS
= 0V, Ta = −20 to +70°C, Ta = −40 to +85°C for P version, unless otherwise
RI≤5kΩ
0.1μF
2.7V ≤ V
2.2V ≤ V
2.7V ≤ V
2.2V ≤ V
10μF
Condition
REF
REF
REF
REF
≤ 3.6V
≤ 2.7V
≤ 3.6V
≤ 2.7V
AIN0,
AIN1
V
REF
AV
AV
DD
ML610Q411/ML610Q412/ML610Q415
SS
V
V
V
V
DDX
DDL
DD
SS
Min.
2.2
−4
−6
−3
−5
−6
−6
Rating
Typ.
23*
1μF
0.1μF
0.1μF
1
FEDL610Q411-01
AV
Max.
+4
+6
+3
+5
+6
+6
12
DD
specified)
φ/CH
LSB
Unit
bit
33/36
V

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