PC28F128P30B85E NUMONYX, PC28F128P30B85E Datasheet - Page 54
![IC FLASH 128MBIT 85NS 64EZBGA](/photos/7/29/72914/pc28f128p30b85_s_l9yq_sml.jpg)
PC28F128P30B85E
Manufacturer Part Number
PC28F128P30B85E
Description
IC FLASH 128MBIT 85NS 64EZBGA
Manufacturer
NUMONYX
Series
StrataFlash™r
Datasheet
1.RD48F4400P0VBQEJ.pdf
(97 pages)
Specifications of PC28F128P30B85E
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (8Mx16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
887046
887046
PC28F128P30B85 S L9YQ
887046
PC28F128P30B85 S L9YQ
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PC28F128P30B85E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Table 26: DC Current Characteristics (Sheet 2 of 2)
14.2
Table 27: DC Voltage Characteristics
Datasheet
54
Notes:
1.
2.
3.
4.
5.
V
V
V
V
V
V
V
Notes:
1.
2.
3.
Sym
Sym
IL
IH
OL
OH
PPLK
LKO
LKOQ
I
PPE
All currents are RMS unless noted. Typical values at typical V
I
Sampled, not 100% tested.
I
I
Characteristics” on page 67
Synchronous read mode is not supported with TTL inputs.
V
V
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
V
V
CCS
CCES
CCW
IL
PP
PP
CC
CCQ
PP
can undershoot to –0.4 V and V
≤ V
, I
Erase Current
Lock-Out Voltage
Lock Voltage
is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted.
Parameter
is specified with the device deselected. If device is read while in erase suspend, current is I
Lock Voltage
CCE
PPLK
DC Voltage Characteristics
measured over typical or max times specified in
inhibits erase and program operations. Do not use V
Parameter
V
(VCCQ = 1.7 V – 3.6 V)
V
CCQ
CCQ
Min
1.0
0.9
– 0.4 V
0
-
-
CMOS Inputs
– 0.1
.
IH
can overshoot to V
0.05
Typ
1.7 V - 3.6
8
(V
Inputs
CMOS
CCQ
V)
V
Max
0.4
0.1
0.4
CCQ
-
-
-
Max
0.10
=
22
(VCCQ = 2.4 V – 3.6 V)
0.05
V
Typ
TTL Inputs
2.4 V - 3.6
8
CCQ
CCQ
(V
Min
2.0
1.0
0.9
Section 16.0, “Program and Erase
CCQ
TTL Inputs
0
-
-
V)
– 0.1
+ 0.4 V for durations of 20 ns or less.
CC
Max
0.10
, T
=
22
PPL
C
= +25 °C.
and V
Unit
mA
V
Max
(1)
0.6
0.1
0.4
CCQ
PPH outside their valid ranges.
-
-
-
V
V
PP
PP
= V
= V
Unit
V
V
V
V
V
V
V
Test Conditions
PPL,
PPH,
erase in progress
erase in progress
V
V
I
V
V
I
OL
OH
CC
CCQ
CC
CCQ
Test Condition
= 100 µA
= –100 µA
= V
= V
= V
= V
CCES
CC
CC
CCQ
CCQ
Min
Min
plus I
Min
Min
CCR
August 2008
306666-12
.
2
3
Notes
Notes
P30