MMBZ15VAL NXP Semiconductors, MMBZ15VAL Datasheet - Page 12

no-image

MMBZ15VAL

Manufacturer Part Number
MMBZ15VAL
Description
DIODE,DUAL TVS,UNI DIR,40W,12V,SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of MMBZ15VAL

Reverse Stand-off Voltage Vrwm
12V
Breakdown Voltage Range
14.25V To 15.75V
Clamping Voltage Vc Max
21V
Diode Configuration
Common Anode
Peak Pulse Current Ippm
1.9A
Diode Case Style
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBZ15VAL
Manufacturer:
NXP
Quantity:
42 000
Part Number:
MMBZ15VAL
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
MMBZ15VAL-7-F
Manufacturer:
Diodes Inc
Quantity:
32 131
Company:
Part Number:
MMBZ15VAL-7-F
Quantity:
5 000
Company:
Part Number:
MMBZ15VALFHT116
Quantity:
9 000
Part Number:
MMBZ15VALT1
Quantity:
5 195
Part Number:
MMBZ15VALT1
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MMBZ15VALT1G
Manufacturer:
ON Semiconductor
Quantity:
100 414
Part Number:
MMBZ15VALT1G
Manufacturer:
ON Semiconductor
Quantity:
5 100
Part Number:
MMBZ15VALT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MMBZ15VALT1G
Quantity:
12 000
Company:
Part Number:
MMBZ15VALT1G
Quantity:
3 000
Company:
Part Number:
MMBZ15VALT1G
Quantity:
2 500
Company:
Part Number:
MMBZ15VALT1G
Quantity:
165 000
NXP Semiconductors
8. Application information
9. Test information
MMBZXAL_SER_2
Product data sheet
9.1 Quality information
The MMBZxAL series is designed for the protection of up to two unidirectional data or
signal lines from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and MMBZ10VAL provide
a surge capability of 24 W per line, the MMBZ12VAL, MMBZ15VAL, MMBZ18VAL,
MMBZ20VAL, MMBZ27VAL and MMBZ33VAL provide a surge capability of 40 W per line,
for a 10/1000 μs waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
1. Place the MMBZxAL series as close to the input terminal or connector as possible.
2. The path length between the MMBZxAL series and the protected line should be
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all PCB conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
Fig 10. Typical application: ESD and transient voltage protection of data lines
minimized.
vias.
unidirectional protection
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
of two lines
line 1 to be protected
line 2 to be protected
MMBZxAL
GND
bidirectional protection
MMBZxAL series
of one line
MMBZxAL
line 1 to be protected
GND
006aab842
© NXP B.V. 2009. All rights reserved.
12 of 17

Related parts for MMBZ15VAL