MMBZ33VAL NXP Semiconductors, MMBZ33VAL Datasheet - Page 8
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MMBZ33VAL
Manufacturer Part Number
MMBZ33VAL
Description
DIODE,DUAL TVS,UNI DIR,40W,26V,SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.MMBZ27VAL235.pdf
(17 pages)
Specifications of MMBZ33VAL
Reverse Stand-off Voltage Vrwm
26V
Breakdown Voltage Range
31.35V To 34.65V
Clamping Voltage Vc Max
46V
Diode Configuration
Common Anode
Peak Pulse Current Ippm
870mA
Diode Case
RoHS Compliant
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NXP Semiconductors
7. Characteristics
MMBZXAL_SER_2
Product data sheet
Table 10.
T
Symbol
Per diode
V
V
I
V
RM
amb
F
RWM
BR
= 25
°
C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse standoff voltage
reverse leakage current
breakdown voltage
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
Conditions
I
V
V
V
V
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
F
R
R
R
R
R
R
R
R
R
R
R
RWM
RWM
RWM
RWM
RWM
RWM
RWM
RWM
RWM
RWM
RWM
= 10 mA
= 20 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 3 V
= 3 V
= 4.5 V
= 6 V
= 6.5 V
= 8.5 V
= 12 V
= 14.5 V
= 17 V
= 22 V
= 26 V
MMBZxAL series
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5.32
5.89
6.46
8.65
9.5
11.4
14.25 15
17.1
19
25.65 27
31.35 33
Typ
-
-
-
-
-
-
-
-
-
-
-
-
0.24
5
10
5
1
0.1
0.1
0.1
0.1
0.1
0.1
5.6
6.2
6.8
9.1
10
12
18
20
© NXP B.V. 2009. All rights reserved.
Max
0.9
3
3
4.5
6
6.5
8.5
12
14.5
17
22
26
5
200
300
100
20
5
5
5
5
5
5
5.88
6.51
7.14
9.56
10.5
12.6
15.75 V
18.9
21
28.35 V
34.65 V
Unit
V
V
V
V
V
V
V
V
V
V
V
V
μA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
V
V
V
V
V
V
V
V
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