MMBZ6V2AL NXP Semiconductors, MMBZ6V2AL Datasheet - Page 15

• Manufacturer Part Number: MMBZ6V2AL
• Description: DIODE,DUAL TVS,UNI DIR,40W,3V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ6V2AL

• Reverse Stand-off Voltage Vrwm: 3V
• Breakdown Voltage Range: 5.89V To 6.51V
• Clamping Voltage Vc Max: 8.7V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 2.76A
• Diode Case Style: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
13. Revision history
Table 12.
MMBZXAL_SER_2
Product data sheet
Document ID
MMBZXAL_SER_2
Modifications:
MMBZXVAL_SER_1
Revision history
20091210
20080901
Release date
•
•
•
•
•
•
Type numbers MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and
MMBZ10VAL added
Type numbers MMBZ12VAL/DG, MMBZ15VAL/DG, MMBZ18VAL/DG, MMBZ20VAL/DG,
MMBZ27VAL/DG, MMBZ33VAL/DG removed
Figure 5
Figure
Figure
Section 14 “Legal
6: added
10: updated
and 7: updated
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
information”: updated
Change notice
-
-
MMBZxAL series
Supersedes
MMBZXVAL_SER_1
-
© NXP B.V. 2009. All rights reserved.
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