MMBZ6V8AL NXP Semiconductors, MMBZ6V8AL Datasheet - Page 6
MMBZ6V8AL
Manufacturer Part Number
MMBZ6V8AL
Description
DIODE,DUAL TVS,UNI DIR,40W,4.5V,SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.MMBZ27VAL235.pdf
(17 pages)
Specifications of MMBZ6V8AL
Reverse Stand-off Voltage Vrwm
4.5V
Breakdown Voltage Range
6.46V To 7.14V
Clamping Voltage Vc Max
9.6V
Diode Configuration
Common Anode
Peak Pulse Current Ippm
2.5A
Diode Case
RoHS Compliant
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NXP Semiconductors
MMBZXAL_SER_2
Product data sheet
Fig 1.
(%)
I
PP
150
100
50
0
0
IEC 61643-321
10/1000 μs pulse waveform according to
100 % I
1.0
PP
; 10 μs
50 % I
2.0
PP
; 1000 μs
3.0
t
006aab319
p
(ms)
Rev. 02 — 10 December 2009
4.0
Low capacitance unidirectional double ESD protection diodes
Fig 2.
100 %
90 %
10 %
ESD pulse waveform according to
IEC 61000-4-2
I
PP
t
r
30 ns
MMBZxAL series
= 0.7 ns to 1 ns
60 ns
© NXP B.V. 2009. All rights reserved.
001aaa631
t
6 of 17
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