NUP1301 NXP Semiconductors, NUP1301 Datasheet - Page 5

DIODE,DUAL TVS,UNI DIR,220W,80V,SOT23

NUP1301

Manufacturer Part Number
NUP1301
Description
DIODE,DUAL TVS,UNI DIR,220W,80V,SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of NUP1301

Reverse Stand-off Voltage Vrwm
80V
Breakdown Voltage Range
100V
Clamping Voltage Vc Max
20V
Diode Configuration
Unidirectional
Peak Pulse Current Ippm
11A
Diode Case Style
SOT-23
No. Of
RoHS Compliant

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NXP Semiconductors
7. Characteristics
NUP1301_1
Product data sheet
Table 9.
T
[1]
[2]
[3]
Symbol
Per diode
V
V
I
C
Per device
V
R
amb
BR
F
CL
d
Pulse test: t
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
= 25 C unless otherwise specified.
Parameter
breakdown voltage
forward voltage
reverse current
diode capacitance
clamping voltage
Electrical characteristics
p
300 s;
Rev. 01 — 11 May 2009
0.02.
Conditions
I
I
I
I
I
V
V
V
T
V
T
f = 1 MHz; V
I
I
R
F
F
F
F
PP
PP
j
j
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 150 C
= 150 C
= 100 A
= 25 V
= 80 V
= 25 V;
= 80 V;
= 1 A
= 11 A
Ultra low capacitance ESD protection array
R
= 0 V
[2][3]
[2][3]
[1]
Min
100
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
0.6
-
-
NUP1301
© NXP B.V. 2009. All rights reserved.
Max
-
715
855
1
1.25
30
100
25
35
0.75
3
20
Unit
V
mV
mV
V
V
nA
nA
pF
V
V
5 of 13
A
A

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