MBR20H150CT Taiwan Semiconductor, MBR20H150CT Datasheet - Page 2
MBR20H150CT
Manufacturer Part Number
MBR20H150CT
Description
DIODE, SCHOTTKY, 20A, 150V
Manufacturer
Taiwan Semiconductor
Datasheet
1.MBR20H150CT.pdf
(2 pages)
Specifications of MBR20H150CT
Repetitive Reverse Voltage Vrrm Max
150V
Forward Current If(av)
20A
Forward Voltage Vf Max
970mV
Forward Surge Current Ifsm Max
150A
Diode Configuration
Dual Common Cathode
Diode Type
Schottky
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR20H150CT
Manufacturer:
ON
Quantity:
12 500
Part Number:
MBR20H150CT
Manufacturer:
深爱/SI
Quantity:
20 000
Company:
Part Number:
MBR20H150CT-E3/45
Manufacturer:
Vishay/General Semiconductor
Quantity:
1 915
Part Number:
MBR20H150CT-E3/45
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
MBR20H150CTG
Manufacturer:
ON Semiconductor
Quantity:
500
2,000
1,000
5,000
0.01
500
200
100
10
0.1
40
16
12
20
8
0
1
4
FIG.3- TYPICAL INSTANTANEOUS FORWARD
0.1
0
0
FIG.1- FORWARD CURRENT DERATING CURVE
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
RATINGS AND CHARACTERISTIC CURVES (MBR20H100CT - MBR20H200CT)
RESISTIVE OR
INDUCTIVE LOAD
0.1
25
CHARACTERISTICS PER LEG
0.2
0.3
FORWARD VOLTAGE. (V)
50
Tj=125 C
0.4
CASE TEMPERATURE. ( C)
1.0
REVERSE VOLTAGE. (V)
0.5
0
75
0.6
0.7
Tj=25 C
Pulse Width=300 s
1% Duty Cycle
100
0.8
0
0.9
125
10
o
1.0 1.1
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
150
1.2
0
175
100
0.0001
0.001
10.0
150
125
100
100
0.01
75
50
25
0.1
0.1
1
5
1
0
1
0.01
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
FIG.4- TYPICAL REVERSE CHARACTERISTICS
0
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
20
SURGE CURRENT PER LEG
PER LEG
PER LEG
40
0.1
NUMBER OF CYCLES AT 60Hz
Tj=125 C
T, PULSE DURATION. (sec)
60
0
Tj=75 C
80
0
10
1
100
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
Tj=25 C
120
0
Version: A07
10
140
100
100