1N4448 NXP Semiconductors, 1N4448 Datasheet - Page 4
![DIODE, HIGH SPEED, DO-35](/photos/22/10/221012/ge2do3507-40_sml.jpg)
1N4448
Manufacturer Part Number
1N4448
Description
DIODE, HIGH SPEED, DO-35
Manufacturer
NXP Semiconductors
Datasheet
1.1N4148113.pdf
(9 pages)
Specifications of 1N4448
Diode Type
Small Signal
Forward Current If(av)
150mA
Repetitive Reverse Voltage Vrrm Max
75V
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
500mA
Operating
RoHS Compliant
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NXP Semiconductors
GRAPHICAL DATA
2004 Aug 10
handbook, full pagewidth
High-speed diodes
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
Based on square wave currents.
T
j
(mA)
I FSM
= 25 °C prior to surge.
(A)
300
I
200
100
10
F
10
10
0
−1
1
2
0
1
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
100
10
T
amb
(°C)
mbg451
200
10
4
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
I F
600
400
200
j
j
j
= 175 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
0
Forward current as a function of forward
voltage.
10
3
(1)
1
1N4148; 1N4448
(2)
t p (µs)
V F (V)
Product data sheet
(3)
MBG704
MBG464
10
2
4