BLA6H1011-600 NXP Semiconductors, BLA6H1011-600 Datasheet - Page 3

• Manufacturer Part Number: BLA6H1011-600
• Description: LDOMS,RF,600W,1030M-1090MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLA6H1011-600

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 72A
• Operating Frequency Range: 960MHz To 1.215GHz / 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-539A
• No. Of Pi: RoHS Compliant
• Transistor Type: RF MOSFET

NXP Semiconductors
6. Characteristics
BLA6H1011-600_1
Product data sheet
6.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: pulsed RF; t
T
The BLA6H1011-600 is capable of withstanding a load mismatch corresponding to
VSWR = 5 : 1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
V
G
RL
P
η
P
t
t
Dq
DSS
DSX
GSS
r
f
j
case
fs
D
(BR)DSS
GS(th)
L
DS
L(1dB)
droop(pulse)
DS(on)
p
= 25
in
= 100 mA; P
= 25
°
C; per section unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
°
C; unless otherwise specified, in a class-AB production test circuit.
DC characteristics
RF characteristics
Parameter
output power
drain-source voltage
power gain
input return loss
output power at 1 dB gain compression
drain efficiency
pulse droop power
rise time
fall time
All information provided in this document is subject to legal disclaimers.
L
= 600 W; t
Rev. 01 — 22 April 2010
p
p
= 50 μs; δ = 2 %; f = 1030 MHz.
= 50
μ
s;
δ
= 2 %; RF performance at V
Conditions
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 9.5 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
GS(th)
GS(th)
D
DS
D
D
Conditions
P
P
P
P
P
P
P
= 2.7 mA
+ 3.75 V;
+ 3.75 V;
DS
LDMOS avionics power transistor
= 270 mA
= 270 mA
L
L
L
L
L
L
L
= 50 V
= 600 W
= 600 W
= 600 W
= 600 W
= 600 W
= 600 W
= 600 W
BLA6H1011-600
= 0 V
DS
Min
100
1.25
-
32
-
1.6
-
DS
Min Typ Max Unit
600 -
-
16
8
-
47
-
-
-
= 48 V; I
= 48 V;
© NXP B.V. 2010. All rights reserved.
Typ
-
1.8
-
42
-
3
100
-
17
12
700 -
52
0
11
5
Dq
= 100 mA;
-
48
-
-
-
0.3
30
30
Max Unit
-
2.25 V
1.4
-
140 nA
-
169 mΩ
3 of 13
W
V
dB
dB
W
%
dB
ns
ns
V
μA
A
S