BLF573 NXP Semiconductors, BLF573 Datasheet - Page 2

LDMOS,RF,300W,HF-500MHZ,50V

BLF573

Manufacturer Part Number
BLF573
Description
LDMOS,RF,300W,HF-500MHZ,50V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF573

Drain Source Voltage Vds
50V
Continuous Drain Current Id
42A
Operating Frequency Range
108MHz To 225MHz
Rf Transistor Case
SOT-502A
No. Of Pins
2
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF573_BLF573S
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
Pin
BLF573 (SOT502A)
1
2
3
BLF573S (SOT502B)
1
2
3
Type number Package
BLF573
BLF573S
Symbol
V
V
I
T
Symbol
R
T
D
stg
j
DS
GS
th(j-c)
Connected to flange.
R
th(j-c)
is measured under RF conditions.
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Parameter
thermal resistance from
junction to case
drain
gate
source
drain
gate
source
Description
Name Description
-
-
All information provided in this document is subject to legal disclaimers.
flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
earless flanged LDMOST ceramic package, 2 leads
Rev. 3 — 8 July 2010
Conditions
Conditions
T
case
= 80 °C; P
[1]
[1]
Simplified outline
BLF573; BLF573S
L
HF / VHF power LDMOS transistor
= 300 W
1
2
1
2
3
[1]
3
Graphic symbol
-
Min
-
−0.5
-
−65
Typ
0.21
© NXP B.V. 2010. All rights reserved.
2
2
Max
110
+11
42
+150
225
sym112
sym112
Version
SOT502B
1
3
1
3
Unit
K/W
2 of 16
Unit
V
V
A
°C
°C

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