BLF578 NXP Semiconductors, BLF578 Datasheet - Page 6

• Manufacturer Part Number: BLF578
• Description: LDMOS,RF,1000W,HF-500MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF578

• Drain Source Voltage Vds: 110V
• Continuous Drain Current Id: 88A
• Operating Frequency Range: 225MHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
8. Test information
BLF578_2
Product data sheet
Fig 5.
(dB)
G
p
26
24
22
20
18
100
V
δ = 20 %.
Power gain and drain efficiency as function of
load power; typical values
DS
= 50 V; I
8.2.1 1-Tone CW pulsed
400
8.1 Impedance information
8.2 RF performance
G
η
D
p
Dq
= 40 mA; f = 225 MHz; t
Table 8.
Simulated Z
The following figures are measured in a class-AB production test circuit.
f
MHz
225
700
Fig 4.
1000
Definition of transistor impedance
Typical impedance
S
and Z
1300
001aak926
P
L
L
p
test circuit impedances.
(W)
= 100 μs;
1600
Rev. 02 — 4 February 2010
0
80
60
40
20
(%)
η
D
Z
Ω
3.2 + j2.6
S
Fig 6.
gate
(dBm)
Z
P
S
(1) P
(2) P
L
65
64
63
62
61
60
59
58
34
V
δ = 20 %.
Load Power as function of source power;
typical values
DS
L(1dB)
L(3dB)
= 50 V; I
001aaf059
= 61.0 dBm (1260 W)
= 61.4 dBm (1400 W)
Z
drain
L
Dq
36
= 40 mA; f = 225 MHz; t
Z
Ω
3.7 − j0.2
L
Power LDMOS transistor
ideal P
(1)
38
L
P
P
L
© NXP B.V. 2010. All rights reserved.
s
(dBm)
001aak927
BLF578
p
= 100 μs;
(2)
40
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