6MBI50S-120-50 FUJI ELECTRIC, 6MBI50S-120-50 Datasheet - Page 11

• Manufacturer Part Number: 6MBI50S-120-50
• Description: 6-PACK IGBT MODULE 50A 1200V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI50S-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.65V
• Power Dissipation Max: 360W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Power Dissipation Pd: 360W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
5000
1000
500
100
500
100
50
50
40
30
20
10
0
10
10
0
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
Vcc=600V, VGE=± 15V, Rg= 24Ω , Tj= 25℃
Vcc=600V, Ic=50A, VGE=± 15V, Tj= 125℃
Vcc=600V, Ic=50A, VGE=± 15V, Tj= 25℃
ton
toff
tr
tf
Collector current : Ic [ A ]
Gate resistance : Rg [ Ω ]
Gate resistance : Rg [ Ω ]
20
50
50
40
100
100
60
ton
toff
tr
Eon
tf
Eoff
Err
500
500
80
1000
500
100
120
100
50
14
12
10
80
60
40
20
8
6
4
2
0
0
0
0
0
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=± 15V, Rg= 24Ω , Tj= 125℃
toff
200
Collector - Emitter voltage : VCE [ V ]
ton
+VGE=15V, -VGE≦ 15V, Rg≧ 24Ω , Tj≦ 125℃
tr
tf
MS5F 6174
20
Vcc=600V, VGE=± 15V, Rg=24Ω
Collector current : Ic [ A ]
Collector current : Ic [ A ]
20
Reverse bias safe operating area
400
40
600
40
800
60
1000
60
Eon(125℃ )
Eoff(125℃ )
Err(125℃ )
Eoff(25℃ )
Eon(25℃ )
Err(25℃ )
80
H04-004-03a
1200
11
14
1400
100
80