6MBI50S-120-50 FUJI ELECTRIC, 6MBI50S-120-50 Datasheet - Page 12

• Manufacturer Part Number: 6MBI50S-120-50
• Description: 6-PACK IGBT MODULE 50A 1200V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI50S-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.65V
• Power Dissipation Max: 360W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Power Dissipation Pd: 360W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
120
100
0.1
80
60
40
20
0.001
0
3
1
0
Forward current vs. Forward on voltage (typ.)
Forward on voltage : VF [ V ]
Transient thermal resistance
1
Pulse width : Pw [ sec ]
0.01
2
Tj=125℃
0.1
3
Tj=25℃
FWD
IGBT
4
1
300
100
10
0
trr(125℃ )
Irr(125℃ )
trr(25℃ )
Irr(25℃ )
Reverse recovery characteristics (typ.)
MS5F 6174
Vcc=600V, VGE=± 15V, Rg=24Ω
20
Forward current : IF [ A ]
40
60
H04-004-03a
12
14
80