6MBI50S-120-50 FUJI ELECTRIC, 6MBI50S-120-50 Datasheet - Page 4

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6MBI50S-120-50

Manufacturer Part Number
6MBI50S-120-50
Description
6-PACK IGBT MODULE 50A 1200V NPT
Manufacturer
FUJI ELECTRIC
Datasheet

Specifications of 6MBI50S-120-50

Module Configuration
Six
Transistor Polarity
N Channel
Dc Collector Current
75A
Collector Emitter Voltage Vces
2.65V
Power Dissipation Max
360W
Collector Emitter Voltage V(br)ceo
1.2kV
Power Dissipation Pd
360W
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
6MBI50S-120-50
Manufacturer:
ST
Quantity:
2 300
3. Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified )
4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified)
5. Thermal resistance characteristics
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting Screw Torque
Zero gate voltage
Gate-Emitter leakage current
Gate-Emitter
Collector-Emitter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Thermal resistance
Contact Thermal resistance
Collector current
threshold voltage
saturation voltage
※ This is the value which is defined mounting on the additional cooling fin
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.5~3.5 N・m (M5)
with thermal compound.
(1 device)
Items
Items
(*1)
Items
(*2)
Symbols
Symbols
V
V
R
R
CE(sat)
I
Coes
I
GE(th)
Cies
Cres
GES
th(j-c)
th(c-f)
CES
ton
toff
tr
V
trr
tr
tf
(i)
F
V
V
V
V
Ic =
V
V
f =
Vcc =
Ic =
V
R
I
IF =
F
IGBT
FWD
with Thermal Compound
GE
CE
CE
GE
GE
CE
GE
G
Symbols
-Ic pulse
=
Ic pulse
V
V
=
Tstg
Viso
=
=
=
GES
=
=
=
=
CES
-Ic
Pc
Tj
Ic
600 V
±15 V
20 V, Ic =
15 V
50 A
10 V
50 A
24 Ω
50 A
50 A
0 V, V
0 V, V
0 V
1 MHz
Conditions
Conditions
Continuous
CE
GE
1ms
Tj =
Tj =
Tj =
Tj =
AC : 1min.
Conditions
= 1200 V
=
1 device
MS5F 6174
(※)
1ms
±20 V
125 ℃
125 ℃
50 mA
25 ℃
25 ℃
Tc=25℃
Tc=80℃
Tc=25℃
Tc=80℃
min.
min.
5.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Characteristics
Characteristics
6000
1250
1100
0.35
0.25
0.45
0.08
0.05
-40~ +125
typ.
typ.
7.2
2.3
2.8
0.1
2.5
2.0
Maximum
-
-
-
-
-
Ratings
1200
2500
±20
150
100
100
360
150
3.5
75
50
50
H04-004-03a
Max. Units
Max. Units
2.65
0.35
0.35
0.75 ℃/W
200
1.0
8.5
1.2
0.6
1.0
0.3
3.3
4
-
-
-
-
-
-
-
14
N・m
Units
mA
nA
pF
W
μs
μs
V
V
A
V
V
V
V

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