6MBI50S-120-50 FUJI ELECTRIC, 6MBI50S-120-50 Datasheet - Page 5

• Manufacturer Part Number: 6MBI50S-120-50
• Description: 6-PACK IGBT MODULE 50A 1200V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI50S-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.65V
• Power Dissipation Max: 360W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Power Dissipation Pd: 360W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6. Indication on module (モジュール表示)
9. Definitions of switching time
10. Packing and Labeling
7. Applicable category
8. Storage and transportation notes
・ The module should be stored at a standard temperature of 5 to 35℃ and
・ Store modules in a place with few temperature changes in order to avoid
・ Avoid exposure to corrosive gases and dust.
・ Avoid excessive external force on the module.
・ Store modules with unprocessed terminals.
・ Do not drop or otherwise shock the modules when tranporting.
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
Logo of pr oduction
This specification is applied to IGBT Module named 6MBI50S-120-50.
humidity of 45 to 75% .
Be careful to solderability of the terminals if the module has passed over one
year from manufacturing date, under the above storage condition.
condensation on the module surface.
Lot.No.
R
G
V
GE
6MBI50S-120-50
V
CE
50A 1200V
Ic
L
Vcc
0V
0V
0A
V
V
Ic
GE
CE
Place of manufactur ing (code)
10%
90%
t
on
t
r
t
t
r(i)
rr
10%
MS5F 6174
I
rr
V
Ic
CE
90%
t
off
90%
t
f
10%
0V
H04-004-03a
5
14