IXA45IF1200HB IXYS SEMICONDUCTOR, IXA45IF1200HB Datasheet - Page 5
IXA45IF1200HB
Manufacturer Part Number
IXA45IF1200HB
Description
IGBT,1200V,74A,TO-247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXA45IF1200HB.pdf
(6 pages)
Specifications of IXA45IF1200HB
Transistor Type
IGBT
Dc Collector Current
78A
Collector Emitter Voltage Vces
2.1V
Power Dissipation Max
325W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
TO-247
Rohs Compliant
Yes
Power Dissipation Pd
325W
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXA45IF1200HB
Manufacturer:
FSC
Quantity:
12 000
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
[A]
[A]
[mJ]
I
I
C
C
E
70
60
50
40
30
20
10
70
60
50
40
30
20
10
10
0
0
8
6
4
2
0
0
5
0
Fig. 3 Typ. tranfer characteristics
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
V
R
V
V
T
GE
VJ
G
CE
GE
T
6
= 15 V
VJ
=
= 125°C
= 600 V
= ±15 V
= 125°C
27
20
7
1
T
VJ
8
= 25°C
V
T
V
CE
VJ
I
GE
C
= 25°C
40
9
[V]
[A]
[V]
2
T
10 11 12 13
VJ
= 125°C
60
3
E
E
on
off
80
Data according to IEC 60747and per diode unless otherwise specified
[mJ]
V
[V]
E
[A]
GE
I
C
70
60
50
40
30
20
10
20
15
10
Fig. 6 Typ. switching energy vs. gate resistance
6
5
4
3
0
5
0
20
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
T
VJ
I
V
V
T
C
I
V
VJ
C
CE
GE
= 125°C
=
CE
20
= 125°C
= 600 V
= ±15 V
= 35 A
= 600 V
1
35 A
V
40
GE
40
IXA45IF1200HB
= 15 V
17 V
19 V
2
60
V
R
Q
CE
G
G
[ ]
[V]
[nC]
80
3
60
100 120 140
13 V
4
E
E
on
off
20100702b
11 V
9 V
80
5