IXDR30N120 IXYS SEMICONDUCTOR, IXDR30N120 Datasheet - Page 2

• Manufacturer Part Number: IXDR30N120
• Description: IGBT TRANSISTOR
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXDR30N120

• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Type: IGBT
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
C
C
C
Q
t
t
t
t
E
E
R
R
Reverse Diode (FRED)
Symbol
V
I
I
t
t
R
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IXYS reserves the right to change limits, test conditions and dimensions
F
RM
d(on)
r
d(off)
f
rr
rr
on
off
F
ies
oes
res
thJC
thCH
thJC
g
Conditions
V
I
Inductive load, T
I
V
Package with heatsink compound
Conditions
I
I
T
T
I
V
I
C
C
F
F
F
F
C
C
CE
CE
GE
= 30 A, V
= 30 A, V
= 30 A, -di
= 1 A, -di
= 30 A, V
= 30 A, V
= 25°C
= 90°C
= 25 V, V
= 600 V, R
= 0 V, T
F
GE
GE
GE
GE
J
/dt = 100 A/µs, V
F
GE
/dt = 400 A/µs, V
= 125°C
= 0 V
= 0 V, T
= 15 V, V
= ±15 V,
G
= 0 V, f = 1 MHz
= 47 Ω
J
= 125°C
J
= 125°C
CE
= 0.5 V
R
(T
(T
R
= 30 V, V
= 600 V
J
J
CES
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
GE
= 0 V
min.
min.
Characteristic Values
Characteristic Values
1650
typ.
0.25
200
typ.
250
110
120
100
500
2.5
2.0
4.6
3.4
20
40
70
70
max.
max.
2.75
1.3 K/W
0.6 K/W
50
27
K/W
mJ
mJ
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
A
A
A
ISOPLUS247
The convex bow of substrate is typ. < 0.04 mm over plastic surface level
of device bottom side
This drawing will meet all dimensions requirement of JEDEC outline
TO-247 AD except screw hole and except Lmax.
IXDR 30N120 D1
IXDR 30N120
TM
OUTLINE
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