IXGR40N60C2 IXYS SEMICONDUCTOR, IXGR40N60C2 Datasheet - Page 3

• Manufacturer Part Number: IXGR40N60C2
• Description: IGBT, ISOPLUS247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGR40N60C2

• Transistor Type: IGBT
• Dc Collector Current: 56A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 170W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Power Dissipation Pd: 170W
• Rohs Compliant: Yes

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3.5
2.5
60
50
40
30
20
60
50
40
30
20
1 .5
1 0
1 0
0
0
4
3
2
1
0.5
0.5
5
6
Fig. 5. Collector-to-Emitter Voltage
1
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
1
vs. Gate-to-Emiiter voltage
8
1 .5
V
V
G E
G E
@ 125 Deg. C
@ 25 Deg. C
V
V
1 .5
V
= 1 5V
= 1 5V
9
C E
G E
1 3V
1 1 V
CE
1 3V
1 1 V
- Volts
- Volts
I
1 0
- Volts
2
C
= 60A
1 1
2
30A
1 5A
2.5
T
1 2
J
= 25
9V
7V
5V
2.5
1 3
5V
9V
7V
º
3
C
1 4
3.5
1 5
3
21 0
1 80
1 50
1 20
21 0
1 80
1 50
1 20
0.9
0.8
0.7
0.6
90
60
30
90
60
30
1 .3
1 .2
1 .1
0
0
1
25
4
0
Fig. 4. Temperature Dependence of V
V
Fig. 2. Extended Output Characteristics
T
G E
J
= 1 25
= 1 5V
-40
1
Fig. 6. Input Admittance
5
25
50
º
º
º
C
C
T
C
V
J
2
G E
- Degrees Centigrade
6
= 1 5V
@ 25 deg. C
V
1 3V
1 1 V
V
75
G E
C E
IXGR 40N60C2D1
3
- Volts
- Volts
7
IXGR 40N60C2
4
1 00
8
5
I
I
I
C
C
C
= 60A
= 30A
= 1 5A
7V
1 25
9V
5V
9
CE(sat)
6
1 50
1 0
7