SI3590DV-T1-GE3 Vishay, SI3590DV-T1-GE3 Datasheet
SI3590DV-T1-GE3
Specifications of SI3590DV-T1-GE3
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SI3590DV-T1-GE3 Summary of contents
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... 2.85 mm Ordering Information: Si3590DV-T1-E3 (Lead (Pb)-free) Si3590DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si3590DV Vishay Siliconix SPECIFICATIONS T = 25°C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... Drain Current (A) D On-Resistance vs. Drain Current otal Gate Charge (nC) g Gate Charge Document Number: 72032 S09-1927-Rev. C, 28-Sep Si3590DV Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 450 360 C iss 270 180 90 C oss C rss ...
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... Si3590DV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 150 ° 0.1 0.00 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0 emperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1 100 125 150 100 I Limited DM Limited by R ...
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... Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72032 S09-1927-Rev. C, 28-Sep- Square W ave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3590DV Vishay Siliconix Notes Duty Cycle Per Unit Base = °C ...
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... Si3590DV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted thru 3 Drain-to-Source Voltage (V) DS Output Characteristics 0.75 0. 0.30 0.15 0. Drain Current (A) D On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge www.vishay.com ° ° 0.0 0.5 1.0 1.5 2 ...
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... Limited DS(on on) Limited 0 °C C Single Pulse BV Limited DS S 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si3590DV Vishay Siliconix 0.5 0.4 0 0.2 0.1 0 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient I ...
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... Si3590DV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...