SI3590DV-T1-GE3 Vishay, SI3590DV-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI3590DV-T1-GE3
• Description: DUAL N/P CH MOSFET, 30V, 2A, TSOP
• Manufacturer: Vishay

Specifications of SI3590DV-T1-GE3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 30V
• Threshold Voltage Vgs Typ: 1.5V
• Power Dissipation Pd: 830mW
• Module Configuration: Dual
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
0.5
0.4
0.3
0.2
0.1
0.0
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
0
0
0
V
I
D
DS
= 2 A
On-Resistance vs. Drain Current
= 15 V
1
V
1
2
V
DS
GS
V
Output Characteristics
Q
GS
- Drain-to-Source Voltage (V)
= 5 V thru 2.5 V
g
I
D
= 2.5 V
- T otal Gate Charge (nC)
- Drain Current (A)
Gate Charge
2
2
4
1.5 V
3
3
6
2 V
V
GS
4
4
8
= 4.5 V
10
5
5
450
360
270
180
1.8
1.6
1.4
1.2
1.0
0.8
0.6
8
7
6
5
4
3
2
1
0
90
0.0
0
- 50
0
On-Resistance vs. Junction Temperature
C
- 25
rss
0.5
V
V
GS
6
DS
T
Transfer Characteristics
V
I
J
0
- Gate-to-Source Voltage (V)
D
- Junction T emperature (°C)
GS
- Drain-to-Source Voltage (V)
= 3 A
1.0
25 °C
= 4.5 V
T
2 5
Capacitance
C
12
C
= 125 °C
oss
1.5
5 0
C
Vishay Siliconix
iss
18
7 5
2.0
Si3590DV
- 55 °C
www.vishay.com
100
24
2.5
125
3.0
150
30
3