SI3590DV-T1-GE3 Vishay, SI3590DV-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI3590DV-T1-GE3
• Description: DUAL N/P CH MOSFET, 30V, 2A, TSOP
• Manufacturer: Vishay

Specifications of SI3590DV-T1-GE3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 30V
• Threshold Voltage Vgs Typ: 1.5V
• Power Dissipation Pd: 830mW
• Module Configuration: Dual
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.1
10
- 50
1
0.00
- 25
Source-Drain Diode Forward Voltage
T
J
V
= 150 °C
0.3
SD
0
- Source-to-Drain Voltage (V)
T
I
D
J
Threshold Voltage
= 250 µA
- T emperature (°C)
2 5
0.6
5 0
0.9
7 5
T
J
= 25 °C
0.01
100
0.1
100
10
1
0.1
1.2
* V
125
Safe Operating Area, Junction-to-Case
GS
Limited
I
D( on)
> minimum V
Limited by R
150
1.5
V
DS -
Single Pulse
T
C
Drain-to-Source Voltage (V)
1
= 25 °C
GS
DS(on)
BV
at which R
DS S
*
Limited
DS(on)
1 0
I
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
DM
0.01
is specified
Limited
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
10 s, 1 s
DC
100 µs
1
100
V
GS
0.1
2
- Gate-to-Source Voltage (V)
Time (s)
3
Vishay Siliconix
I
1
D
4
= 2 A
Si3590DV
www.vishay.com
5
10
6
30
7
7