SI3590DV-T1-GE3 Vishay, SI3590DV-T1-GE3 Datasheet - Page 2
![DUAL N/P CH MOSFET, 30V, 2A, TSOP](/photos/18/99/189973/4243386_sml.jpg)
SI3590DV-T1-GE3
Manufacturer Part Number
SI3590DV-T1-GE3
Description
DUAL N/P CH MOSFET, 30V, 2A, TSOP
Manufacturer
Vishay
Datasheet
1.SI3590DV-T1-E3.pdf
(9 pages)
Specifications of SI3590DV-T1-GE3
Transistor Polarity
N And P Channel
Continuous Drain Current Id
2A
Drain Source Voltage Vds
30V
Threshold Voltage Vgs Typ
1.5V
Power Dissipation Pd
830mW
Module Configuration
Dual
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3590DV-T1-GE3
Manufacturer:
VISHAY
Quantity:
36 000
Part Number:
SI3590DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3590DV
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
a
a
a
J
= 25°C, unless otherwise noted
a
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
t
SD
rr
fs
gs
gd
r
f
g
V
V
I
DS
V
V
D
DS
I
DS
D
DS
≅ - 1 A, V
I
F
I
= - 15 V, V
F
≅ 1 A, V
= - 30 V, V
V
V
V
= - 1.05 A, dI/dt = 100 A/µs
V
= 30 V, V
V
V
V
I
= 15 V, V
V
= 1.05 A, dI/dt = 100 A/µs
V
DS
GS
S
V
DS
V
I
V
DS
S
DD
DS
DS
V
V
GS
DS
DD
DS
V
= - 1.05 A, V
DS
GS
GS
= 1.05 A, V
≤ - 5 V, V
= V
= - 2.5 V, I
DS
= 0 V, V
= V
= - 30 V, V
= - 4.5 V, I
= - 15 V, R
≥ 5 V, V
= 30 V, V
= 15 V, R
= - 5 V, I
= 4.5 V, I
= 2.5 V, I
N-Channel
N-Channel
P-Channel
GEN
P-Channel
GEN
= 5 V, I
GS
GS
Test Condition
GS
GS
GS
GS
, I
, I
= 10 V, R
= - 10 V, R
= - 4.5 V, I
D
= 0 V, T
GS
= 4.5 V, I
D
= 0 V, T
GS
GS
= - 250 µA
D
D
D
= 250 µA
GS
GS
L
D
D
D
GS
GS
L
= ± 12 V
= - 1.2 A
= 3 A
= - 2 A
= 4.5 V
= - 4.5 V
= 15 Ω
= 3 A
= - 2 A
= 2 A
= 15 Ω
= 0 V
= 0 V
= 0 V
= 0 V
J
J
g
= 55 °C
D
= 55 °C
D
g
= 6 Ω
= 2 A
= 6 Ω
= - 2 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 0.6
0.6
- 5
5
S09-1927-Rev. C, 28-Sep-09
0.062
0.135
0.095
0.235
- 0.83
Document Number: 72032
Typ.
0.80
3.8
0.6
0.6
1.0
1.5
10
12
15
13
20
20
15
18
5
3
5
5
7
- 1.10
± 100
± 100
0.077
0.170
0.120
0.300
Max.
- 1.5
1.10
1.5
4.5
- 1
- 5
23
23
23
30
12
30
25
30
1
5
6
8
8
Unit
nA
µA
nC
ns
Ω
V
A
S
V