SI3590DV-T1-GE3 Vishay, SI3590DV-T1-GE3 Datasheet - Page 8
![DUAL N/P CH MOSFET, 30V, 2A, TSOP](/photos/18/99/189973/4243386_sml.jpg)
SI3590DV-T1-GE3
Manufacturer Part Number
SI3590DV-T1-GE3
Description
DUAL N/P CH MOSFET, 30V, 2A, TSOP
Manufacturer
Vishay
Datasheet
1.SI3590DV-T1-E3.pdf
(9 pages)
Specifications of SI3590DV-T1-GE3
Transistor Polarity
N And P Channel
Continuous Drain Current Id
2A
Drain Source Voltage Vds
30V
Threshold Voltage Vgs Typ
1.5V
Power Dissipation Pd
830mW
Module Configuration
Dual
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3590DV-T1-GE3
Manufacturer:
VISHAY
Quantity:
36 000
Part Number:
SI3590DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3590DV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72032.
www.vishay.com
8
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square W ave Pulse Duration (s)
10
-2
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
1 0
Notes:
P
DM
JM
- T
A
t
1
1
S09-1927-Rev. C, 28-Sep-09
= P
t
2
Document Number: 72032
DM
Z
th J A
th J A
100
t
t
(t )
1
2
= 87 °C/W
600
10