IXTN60N50L2 IXYS SEMICONDUCTOR, IXTN60N50L2 Datasheet - Page 4

• Manufacturer Part Number: IXTN60N50L2
• Description: MOSFET,N CH,500V,53A,SOT-277B
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXTN60N50L2

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOT-227
• Rohs Compliant: Yes

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
200
180
160
140
120
100
100
100
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
0.4
3.5
0
f
4.0
= 1 MHz
0.5
5
4.5
Fig. 9. Forward Voltage Drop of
0.6
5.0
10
Fig. 7. Input Admittance
T
Fig. 11. Capacitance
5.5
J
= 125ºC
Intrinsic Diode
0.7
15
V
V
V
6.0
SD
DS
GS
- Volts
- Volts
- Volts
0.8
T
6.5
20
J
C iss
C oss
= 125ºC
C rss
- 40ºC
7.0
25ºC
0.9
25
7.5
T
J
= 25ºC
1.0
8.0
30
8.5
1.1
35
9.0
1.2
9.5
40
1.000
0.100
0.010
0.001
16
14
12
10
55
50
45
40
35
30
25
20
15
10
0.00001
8
6
4
2
0
5
0
0
0
V
I
I
10
D
G
100
DS
= 30A
= 10mA
Fig. 12. Maximum Transient Thermal
0.0001
= 250V
20
T
J
200
= - 40ºC
Fig. 8. Transconductance
125ºC
30
25ºC
Fig. 10. Gate Charge
Q
0.001
300
Pulse Width - Seconds
G
40
- NanoCoulombs
I
D
Impedance
- Amperes
400
50
0.01
IXTN60N50L2
60
500
70
600
0.1
80
700
90
1
800
100
110
900
10