IXTH24N50 IXYS SEMICONDUCTOR, IXTH24N50 Datasheet
IXTH24N50
Manufacturer Part Number
IXTH24N50
Description
N CH MOSFET, 500V, 24A, TO-247AD
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXTM21N50.pdf
(4 pages)
Specifications of IXTH24N50
Transistor Polarity
N Channel
Continuous Drain Current Id
24A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
230mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTH24N50
Manufacturer:
IXYS
Quantity:
1 200
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
Symbol
V
V
I
I
R
DM
D25
GSS
DSS
GS
GSM
JM
stg
DSS
DGR
D
J
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
V
J
J
C
C
C
GS
GS
GS
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
TM
GS
, I
FET
D
D
DC
D
= 250 A
= 250 A
DSS
, V
= 0.5 I
DS
= 0
D25
GS
= 1 M
T
T
21N50
24N50
J
J
= 25 C
= 125 C
(T
J
= 25 C, unless otherwise specified)
JM
IXTH / IXTM 21N50
IXTH / IXTM 24N50
21N50
24N50
21N50
24N50
TO-204 = 18 g, TO-247 = 6 g
min.
500
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
500
500
300
150
300
20
30
21
24
84
96
max.
0.25
0.23
100
200
4
1
mA
W
nA
V
V
V
V
A
A
A
A
V
V
C
C
C
C
A
TO-247 AD (IXTH)
TO-204 AE (IXTM)
G = Gate,
S = Source,
Features
l
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
l
International standard packages
Low R
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
500 V
500 V
V
DSS
DS (on)
HDMOS
D
D = Drain,
TAB = Drain
21 A 0.25
24 A 0.23
I
D25
TM
G
process
D (TAB)
R
91536F(5/97)
DS(on)
1 - 4
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IXTH24N50 Summary of contents
Page 1
TM MegaMOS FET N-Channel Enhancement Mode Symbol Test Conditions 150 C DSS 150 C; R DGR J V Continuous GS V Transient GSM ...
Page 2
Symbol Test Conditions 0.5 • iss MHz oss rss t d(on ...
Page 3
Fig. 1 Output Characteristics 10V 25° Volts DS Fig vs. Drain Current DS(on) 1.6 ...
Page 4
Fig.7 Gate Charge Characteristic Curve 250V 12. 10mA 100 125 150 175 200 Gate Charge - ...