BUK6507-55C NXP Semiconductors, BUK6507-55C Datasheet - Page 7

• Manufacturer Part Number: BUK6507-55C
• Description: MOSFET,N CH,55V,72A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK6507-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK6507-55C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
g
(S)
R
(m Ω )
fs
120
DSon
90
60
30
20
16
12
0
8
4
0
drain current; typical values
of gate-source voltage; typical values
T
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
j
Characteristics
= 25°C; V
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
4
DS
= 25 V
…continued
40
8
60
12
All information provided in this document is subject to legal disclaimers.
003aae929
V
003aae891
I
D
GS
(A)
(V)
Rev. 01 — 12 October 2010
Conditions
I
see
I
V
80
16
S
S
GS
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
DS
N-channel TrenchMOS logic and standard level FET
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 25 V
(A)
I
D
100
(A)
I
80
60
40
20
D
80
60
40
20
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
j
T
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
= 25 °C;
j
= 25°C; t
V
GS
(V) = 10
0.5
p
T
j
= 300 μs
= 175 ° C
2
5
4.5
BUK6507-55C
Min
-
-
-
1
T
4
Typ
0.8
48
86
j
= 25 ° C
1.5
© NXP B.V. 2010. All rights reserved.
V
003aae928
GS
003aae892
V
DS
(V)
Max
1.2
-
-
3.6
3.8
3.4
3.2
4
(V)
2
6
Unit
V
ns
nC
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