BUK6510-75C NXP Semiconductors, BUK6510-75C Datasheet
BUK6510-75C
Specifications of BUK6510-75C
Related parts for BUK6510-75C
BUK6510-75C Summary of contents
Page 1
... BUK6510-75C N-channel TrenchMOS FET Rev. 02 — 13 December 2010 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
Page 2
... Product data sheet Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET Graphic symbol mbb076 3 Version SOT78A © NXP B.V. 2010. All rights reserved. ...
Page 3
... Figure °C; see Figure °C mb ≤ 10 µs; T pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 Figure Figure 305 - 158 -55 175 -55 175 ...
Page 4
... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET 0 50 100 150 T 003aae408 =10 μ 100 μ 100 (V) DS © ...
Page 5
... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6510-75C Product data sheet Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET Min Typ Max - - 0. 003aae407 t p δ ...
Page 6
... Figure 16; see Figure °C; see Figure 18; j see Figure see Figure 17; see Figure 16 All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET Min Typ Max = 25 ° -55 ° 1.8 2.3 2.8 0 3.3 1.1 1 ...
Page 7
... ° see Figure /dt = -100 A/µ 003aae409 4.5 4.0 3.8 3.6 3.4 3.3 3 (V) DS Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET Min = Figure ° ° DSon (mΩ ...
Page 8
... Product data sheet 003aae411 ( 100 I (A) D Fig 8. 003aad805 120 180 T (°C) j Fig 10. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET 120 I D 100 175 ° Transfer characteristics: drain current as a function of gate-source voltage ...
Page 9
... T (°C) j Fig 12. Sub-threshold drain current as a function of 003aae413 4.0 4.5 5.0 6 100 125 I (A) D Fig 14. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET - ( min typ - ...
Page 10
... BUK6510-75C Product data sheet 003aad804 V 120 180 T (°C) j Fig 16. Gate-source voltage as a function of gate Q GD 003aaa508 Fig 18. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET 10 GS (V) 8 14V charge ...
Page 11
... Product data sheet 200 I S (A) 150 100 = 175 ° ° 0 (pF All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET 003aae416 1 (V) SD 003aae412 C iss C oss C rss (V) DS © NXP B.V. 2010. All rights reserved ...
Page 12
... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2 ...
Page 13
... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6510-75C v.2 20101213 • Modifications: Status changed from objective to product. • Various changes to content. BUK6510-75C v.1 20100701 BUK6510-75C Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...
Page 14
... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...
Page 15
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...
Page 16
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 13 December 2010 Document identifier: BUK6510-75C ...