BUK6510-75C,127 NXP Semiconductors, BUK6510-75C,127 Datasheet
BUK6510-75C,127
Specifications of BUK6510-75C,127
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BUK6510-75C,127 Summary of contents
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... BUK6510-75C N-channel TrenchMOS FET Rev. 02 — 13 December 2010 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... Product data sheet Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET Graphic symbol mbb076 3 Version SOT78A © NXP B.V. 2010. All rights reserved. ...
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... Figure °C; see Figure °C mb ≤ 10 µs; T pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 Figure Figure 305 - 158 -55 175 -55 175 ...
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... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET 0 50 100 150 T 003aae408 =10 μ 100 μ 100 (V) DS © ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6510-75C Product data sheet Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET Min Typ Max - - 0. 003aae407 t p δ ...
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... Figure 16; see Figure °C; see Figure 18; j see Figure see Figure 17; see Figure 16 All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET Min Typ Max = 25 ° -55 ° 1.8 2.3 2.8 0 3.3 1.1 1 ...
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... ° see Figure /dt = -100 A/µ 003aae409 4.5 4.0 3.8 3.6 3.4 3.3 3 (V) DS Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET Min = Figure ° ° DSon (mΩ ...
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... Product data sheet 003aae411 ( 100 I (A) D Fig 8. 003aad805 120 180 T (°C) j Fig 10. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET 120 I D 100 175 ° Transfer characteristics: drain current as a function of gate-source voltage ...
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... T (°C) j Fig 12. Sub-threshold drain current as a function of 003aae413 4.0 4.5 5.0 6 100 125 I (A) D Fig 14. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET - ( min typ - ...
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... BUK6510-75C Product data sheet 003aad804 V 120 180 T (°C) j Fig 16. Gate-source voltage as a function of gate Q GD 003aaa508 Fig 18. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET 10 GS (V) 8 14V charge ...
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... Product data sheet 200 I S (A) 150 100 = 175 ° ° 0 (pF All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET 003aae416 1 (V) SD 003aae412 C iss C oss C rss (V) DS © NXP B.V. 2010. All rights reserved ...
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... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6510-75C v.2 20101213 • Modifications: Status changed from objective to product. • Various changes to content. BUK6510-75C v.1 20100701 BUK6510-75C Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 BUK6510-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 13 December 2010 Document identifier: BUK6510-75C ...