BUK6510-75C,127 NXP Semiconductors, BUK6510-75C,127 Datasheet - Page 6

• Manufacturer Part Number: BUK6510-75C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6510-75C,127

• Input Capacitance (ciss) @ Vds: 5251pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 77 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
6. Characteristics
Table 6.
BUK6510-75C
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
DSS
GSS
(BR)DSS
GS(th)
DSon
G(tot)
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 13 December 2010
Conditions
I
I
I
see
I
see
I
see
I
see
I
see
V
V
V
V
V
V
V
see
V
see
V
see
V
see
V
see
V
see
V
see
I
see
I
T
see
I
see
D
D
D
D
D
D
D
D
D
D
j
DS
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 45 A; V
= 25 °C; see
= 25 A; V
Figure
Figure 11
Figure 9
Figure
Figure 9
Figure 13
Figure 14
Figure 14
Figure 13
Figure 14
Figure 13
Figure
Figure
Figure 17
Figure
= 75 V; V
= 75 V; V
= 30 V; V
= 20 V; V
= -20 V; V
= -15 V; V
= 10 V; I
= 5 V; I
= 4.5 V; I
= 4.5 V; I
= 10 V; I
= 5 V; I
= 10 V; I
9; see
11; see
15; see
16; see
17; see
D
D
DS
DS
DS
DS
DS
DS
DS
DS
D
D
D
= 15 A; T
= 25 A; T
D
D
GS
GS
GS
DS
GS
GS
DS
DS
= 25 A; T
= 15 A; T
= 25 A; T
= 60 V; V
= 15 V; V
= 60 V; V
= V
= V
= V
= V
= V
= 15 A; T
= 25 A; T
Figure
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
Figure 10
GS
GS
GS
GS
GS
Figure 12
Figure 13
Figure 17
Figure 16
; T
; T
; T
; T
; T
18;
j
j
= 25 °C;
= 25 °C;
j
j
j
j
j
j
j
j
GS
GS
GS
j
j
j
j
j
j
= 25 °C;
= 175 °C;
= -55 °C;
= 25 °C;
= 175 °C;
= 25 °C;
= 25 °C;
= 175 °C;
j
j
j
j
= 175 °C
= 25 °C
= 175 °C
= 25 °C
= 25 °C;
= 25 °C;
= 25 °C
= -55 °C
= 25 °C
= 25 °C
= 5 V;
= 4.5 V;
= 10 V;
BUK6510-75C
Min
75
68
27
1.8
0.5
-
1.1
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
N-channel TrenchMOS FET
Typ
-
-
-
2.3
-
-
1.5
-
-
0.02
-
2
2
2
8.9
11.1
11.4
10.7
10
10.1
-
52
5.9
81
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
2.8
-
3.3
2
-
500
1
500
100
100
100
10.4
13
12
13
11.7
12.4
27
-
-
-
Unit
V
V
V
V
V
V
V
V
µA
µA
µA
nA
nA
nA
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
nC
C
nC
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