BUK654R8-40C NXP Semiconductors, BUK654R8-40C Datasheet - Page 7

• Manufacturer Part Number: BUK654R8-40C
• Description: MOSFET,N CH,40V,88A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK654R8-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3.84mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK654R8-40C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
I
100
fs
D
100
80
60
40
20
75
50
25
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
10.0
Parameter
source-drain voltage
reverse recovery time
recovered charge
5.0
0.5
20
4.5
…continued
40
1
1.5
60
V
GS
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003aae318
003aae320
(V) = 4
V
I
D
DS
(A)
(V)
3.8
3.6
3.4
3.2
Conditions
I
see
I
V
Rev. 03 — 12 October 2010
S
S
80
GS
2
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 25 V
R
(A)
(mΩ)
I
D
DSon
100
N-channel TrenchMOS intermediate level FET
80
60
40
20
20
15
10
5
0
0
j
function of gate-source voltage; typical values
of gate-source voltage; typical values.
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
= 25 °C;
0
0
T
5
j
= 175 °C
2
BUK654R8-40C
Min
-
-
-
10
T
j
= 25 °C
4
Typ
0.85
42
65
15
© NXP B.V. 2010. All rights reserved.
V
GS
003aae319
003aae347
V
GS
(V)
Max
1.2
-
-
(V)
20
6
Unit
V
ns
nC
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