BUK654R8-40C NXP Semiconductors, BUK654R8-40C Datasheet - Page 9

• Manufacturer Part Number: BUK654R8-40C
• Description: MOSFET,N CH,40V,88A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK654R8-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3.84mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
BUK654R8-40C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
DS
003aaa508
003aae321
(V)
C
C
C
iss
oss
rss
10
Rev. 03 — 12 October 2010
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain
(A)
V
(V)
I
S
GS
100
N-channel TrenchMOS intermediate level FET
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
voltage; typical values
0
0
0.3
14 V
25
T
j
= 175 °C
BUK654R8-40C
0.6
50
T
0.9
75
V
j
© NXP B.V. 2010. All rights reserved.
DS
= 25 °C
Q
003aae324
003aae325
V
= 32 V
G
SD
(nC)
(V)
100
1.2
9 of 14