BUK6607-55C NXP Semiconductors, BUK6607-55C Datasheet - Page 4

• Manufacturer Part Number: BUK6607-55C
• Description: MOSFET,N CH,55V,72A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK6607-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6607-55C
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
D
D
10
10
10
120
100
10
80
60
40
20
-1
3
2
1
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
0
Limit R
(1)
DSon
50
= V
DS
/ I
D
100
150
All information provided in this document is subject to legal disclaimers.
T
003aaf081
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10
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DC
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Rev. 1 — 14 October 2010
N-channel TrenchMOS logic and standard level FET
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
10
2
50
BUK6607-55C
100
V
DS
(V)
150
© NXP B.V. 2010. All rights reserved.
T
003aae890
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03na19
(°C)
10
200
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