BUK6607-55C NXP Semiconductors, BUK6607-55C Datasheet - Page 9

• Manufacturer Part Number: BUK6607-55C
• Description: MOSFET,N CH,55V,72A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK6607-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6607-55C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
V
−2
GS
V
V
V
GS(pl)
DS
GS(th)
GS
= 0 V; f = 1 MHz
10
Q
−1
GS1
I
Q
D
GS
Q
GS2
1
Q
G(tot)
Q
GD
10
All information provided in this document is subject to legal disclaimers.
V
003aae897
003aaa508
DS
(V)
C
C
C
iss
rss
oss
10
Rev. 1 — 14 October 2010
2
N-channel TrenchMOS logic and standard level FET
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of
V
(A)
(V)
I
GS
S
100
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
T
V
0
0
j
GS
= 25°C; I
= 0 V
V
DS
0.3
25
= 14 V
D
= 25 A
T
j
= 175 °C
BUK6607-55C
0.6
50
24 V
0.9
75
T
j
© NXP B.V. 2010. All rights reserved.
= 25 °C
Q
003aae899
003aae896
V
G
SD
(nC)
(V)
100
1.2
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