BUK661R8-30C NXP Semiconductors, BUK661R8-30C Datasheet - Page 11

• Manufacturer Part Number: BUK661R8-30C
• Description: MOSFET,N CH,30V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK661R8-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK661R8-30C
Product data sheet
Fig 19. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
-1
1
10
V
All information provided in this document is subject to legal disclaimers.
DS
003aae296
C
C
C
(V)
oss
iss
rss
Rev. 02 — 28 December 2010
10
2
Fig 20. Source current as a function of source-drain
(A)
I
S
100
N-channel TrenchMOS intermediate level FET
80
60
40
20
0
voltage; typical values
0
0.3
T
j
= 175 °C
BUK661R8-30C
0.6
0.9
T
j
© NXP B.V. 2010. All rights reserved.
= 25 °C
003aae300
V
SD
(V)
1.2
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