BUK661R8-30C NXP Semiconductors, BUK661R8-30C Datasheet - Page 4

• Manufacturer Part Number: BUK661R8-30C
• Description: MOSFET,N CH,30V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK661R8-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK661R8-30C
Product data sheet
Fig 1.
Fig 3.
(A)
I
(A)
D
I
D
10
10
10
300
250
200
150
100
10
50
4
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
(1)
100
Limit R
150
All information provided in this document is subject to legal disclaimers.
T
DSon
003aae366
mb
1
(°C)
= V
Rev. 02 — 28 December 2010
200
DS
/ I
D
Fig 2.
P
(%)
der
120
DC
N-channel TrenchMOS intermediate level FET
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
BUK661R8-30C
100
V
DS
100 μ s
100 ms
10 ms
t
(V)
p
=10 μ s
150
© NXP B.V. 2010. All rights reserved.
T
003aae367
mb
03na19
(°C)
10
200
2
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