BUK662R7-55C NXP Semiconductors, BUK662R7-55C Datasheet - Page 10
![MOSFET,N CH,55V,120A,SOT404](/photos/41/50/415039/sot404_3d_sml.gif)
BUK662R7-55C
Manufacturer Part Number
BUK662R7-55C
Description
MOSFET,N CH,55V,120A,SOT404
Manufacturer
NXP Semiconductors
Datasheet
1.BUK662R7-55C118.pdf
(14 pages)
Specifications of BUK662R7-55C
Transistor Polarity
N Channel
Drain Source Voltage Vds
55V
On Resistance Rds(on)
2.3mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
D2-PAK
Rohs Compliant
Yes
NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT404 (D2PAK)
BUK662R7-55C
Product data sheet
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
All information provided in this document is subject to legal disclaimers.
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
Rev. 01 — 7 September 2010
10.30
9.70
E
3
0
b
2.54
e
JEITA
scale
2.5
2.90
2.10
L p
5 mm
15.80
14.80
N-channel TrenchMOS intermediate level FET
H D
mounting
2.60
2.20
Q
base
L p
A 1
BUK662R7-55C
Q
PROJECTION
c
EUROPEAN
A
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
05-02-11
06-03-16
SOT404
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