BUK662R7-55C NXP Semiconductors, BUK662R7-55C Datasheet - Page 11

• Manufacturer Part Number: BUK662R7-55C
• Description: MOSFET,N CH,55V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK662R7-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 2.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
8. Revision history
Table 7.
BUK662R7-55C
Product data sheet
Document ID
BUK662R7-55C v.1
Revision history
Release date
20100907
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 7 September 2010
Data sheet status
Product data sheet
N-channel TrenchMOS intermediate level FET
Change notice
-
BUK662R7-55C
Supersedes
-
© NXP B.V. 2010. All rights reserved.
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