IXFH40N30 IXYS SEMICONDUCTOR, IXFH40N30 Datasheet
IXFH40N30
Manufacturer Part Number
IXFH40N30
Description
MOSFET, N, TO-247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFH40N30.pdf
(4 pages)
Specifications of IXFH40N30
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source Voltage Vds
300V
On Resistance Rds(on)
85mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH40N30
Manufacturer:
IXYS
Quantity:
2 000
Company:
Part Number:
IXFH40N30
Manufacturer:
SAKNEN
Quantity:
4 000
Company:
Part Number:
IXFH40N30Q
Manufacturer:
AD
Quantity:
3 340
Company:
Part Number:
IXFH40N30Q
Manufacturer:
IXYS
Quantity:
3 500
© 2000 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AR
D
DSS
GS
GSM
d
DSS
GS(th)
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
V
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
rr
, HDMOS
, I
D
D
DC
D
= 250 mA
DSS
= 4 mA
G
, V
= 0.5 I
= 2 W
DS
= 0
D25
TM
GS
= 1 MW
Family
DD
T
T
£ V
J
J
FM40N30
FH40N30
(T
= 25°C
= 125°C
DSS
J
35N30
= 25°C, unless otherwise specified)
JM
,
TO-204 = 18 g, TO-247 = 6 g
IXFH/IXFM 35 N30
IXFH 40 N30
IXFM 40 N30
35N30
40N30
35N30
40N30
35N30
40N30
min.
300
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
300
300
±20
±30
140
160
300
150
300
35
40
35
40
30
5
0.100
0.085
0.088
max.
±100
200
4
1
V/ns
mJ
mA
°C
°C
°C
°C
W
nA
mA
V
V
V
V
A
A
A
A
A
A
W
W
W
V
V
TO-204 AE (IXFM)
G = Gate,
S = Source,
TO-247 AD (IXFH)
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
• Space savings
• High power density
rated
- easy to drive and to protect
power supplies
(isolated mounting screw hole)
300 V
300 V
300 V
t
V
rr
DSS
£ 200 ns
DS (on)
HDMOS
35 A 100 mW
40 A
40 A
D = Drain,
TAB = Drain
I
D25
TM
D
process
91523F (07/00)
R
85 mW
88 mW
G
DS(on)
(TAB)
1 - 4
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IXFH40N30 Summary of contents
Page 1
TM HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t , HDMOS rr Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V Transient GSM ...
Page 2
Symbol Test Conditions 0 D25 C iss MHz oss rss t d(on ...
Page 3
IXYS All rights reserved IXFH 35N30 IXFH 40N30 IXFM 35N30 IXFM 40N30 ...
Page 4
Fig.7 Gate Charge Characteristic Curve 150V 21A 10mA 100 125 150 175 200 Gate Charge - nCoulombs Fig.9 Capacitance Curves 4500 ...