IXTH75N10 IXYS SEMICONDUCTOR, IXTH75N10 Datasheet - Page 3

• Manufacturer Part Number: IXTH75N10
• Description: MOSFET, N, TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXTH75N10

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 75A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Voltage
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2003 IXYS All rights reserved
200
150
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
50
80
60
40
20
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-50
0
Fig. 3 R
Fig. 5 Drain Current vs.
Fig. 1 Output Characteristics
T
J
T
= 25°C
-25
20
J
= 25°C
Case Temperature
DS(on)
40
0
75N10
67N10
T
vs. Drain Current
60
25
I
C
D
V
- Degrees C
- Amperes
DS
80
50
- Volts
V
GS
100 120 140 160
75
= 10V
V
GS
100 125 150
V
= 15V
GS
= 10V
8V
9V
6V
5V
7V
IXTH / IXTM 67N10 IXTH / IXTM 75N10
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
150
125
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
75
50
25
0
-50
-50
0
Fig. 4
Fig. 6
Fig. 2
1
-25
-25
V
GS(th)
2
0
0
3
Temperature Dependence
of Drain to Source Resistance
Temperature Dependence of
Breakdown and Threshold
Input Admittance
T
T
T
J
25
25
J
J
= 125°C
V
4
- Degrees C
- Degrees C
GS
I
D
= 37.5A
IXTT 75N10
50
50
- Volts
5
6
75
75
T
J
= 25°C
7
100 125 150
100 125 150
BV
8
DSS
9
10
3