PMN38EN NXP Semiconductors, PMN38EN Datasheet - Page 2

• Manufacturer Part Number: PMN38EN
• Description: MOSFET,N CH,30V,5.4A,SOT457
• Manufacturer: NXP Semiconductors

Specifications of PMN38EN

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 49.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-457
• Rohs Compliant: Yes

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PMN38EN_2
Product data sheet
Pin
1
2
3
4
5
6
Type number
PMN38EN
Symbol Parameter
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
GS
tot
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
Pinning
Symbol
D
D
G
S
D
D
Ordering information
Limiting values
Package
Name
TSOP6
Description
drain
drain
gate
source
drain
drain
Description
plastic surface-mounted package (TSOP6); 6 leads
Conditions
T
T
T
T
T
T
T
j
sp
sp
sp
sp
sp
sp
≥ 25 °C; T
= 100 °C; V
= 25 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 25 °C; t
Rev. 02 — 3 October 2007
j
p
p
≤ 150 °C
GS
≤ 10 μs; pulsed; see
= 10 μs; pulsed
GS
Figure 2
= 10 V; see
= 10 V; see
Simplified outline
Figure 1
SOT457 (TSOP6)
Figure 1
Figure 3
1
6
and
5
2
N-channel TrenchMOS logic level FET
3
4
3
-20
-55
Min
-
-
-
-
-
-55
-
-
Graphic Symbol
PMN38EN
Max
30
20
3.4
5.4
21.6
1.75
150
150
1.45
5.8
mbb076
G
© NXP B.V. 2007. All rights reserved.
D
S
Version
SOT457
Unit
V
V
A
A
A
W
°C
°C
A
A
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