PSMN045-80YS NXP Semiconductors, PSMN045-80YS Datasheet
PSMN045-80YS
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PSMN045-80YS Summary of contents
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... PSMN045-80YS N-channel LFPAK mΩ standard level MOSFET Rev. 02 — 25 October 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... GS drain-source Ω; unclamped avalanche energy R GS Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN045-80YS Min Typ = 3.1 D Figure 14 ° j(init) ≤ sup Graphic symbol ...
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... V sup GS 001aal626 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN045-80YS Min - = 20 kΩ -20 Figure °C; see Figure -55 - ° ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN045-80YS Product data sheet N-channel LFPAK mΩ standard level MOSFET DC 10 All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN045-80YS 003aad301 10 μs 100 μ 100 ms 2 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN045-80YS Product data sheet N-channel LFPAK mΩ standard level MOSFET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN045-80YS Min Typ Max - 1.9 2.7 003aaf381 tp P δ ...
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... Figure see Figure see Figure 14; see Figure see MHz °C; see Figure 2.7 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN045-80YS Min Typ Max = -55 ° ° 4 ° 100 - - 100 - - 103 - - 0.73 ...
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... Conditions see Figure /dt = 100 A/µ 003aad046 5 ( (V) DS Fig 6. 003aad052 ( (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN045-80YS Min Typ = 25 ° 100 V ( DSon (mΩ Drain-source on-state resistance as a function of drain current; typical values Forward transconductance as a function of drain current ...
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... D (A) −2 10 −3 10 −4 10 −5 10 −6 10 120 180 0 T (°C) j Fig 12. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN045-80YS 003aad048 = 175 ° ° (V) GS 03aa35 min typ max (V) GS © ...
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... N-channel LFPAK mΩ standard level MOSFET 003aad045 90 120 150 180 T (°C) j Fig 14. Gate charge waveform definitions 003aad370 64V (nC) G Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN045-80YS GS(pl) V GS(th GS1 GS2 ...
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... Fig 17. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PSMN045-80YS Product data sheet N-channel LFPAK mΩ standard level MOSFET (pF All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN045-80YS 003aad051 C iss C oss C rss (V) DS © NXP B.V. 2010. All rights reserved ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN045-80YS detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN045-80YS v.2 20101025 • Modifications: Status changed from objective to product. • Various changes to content. PSMN045-80YS v.1 20100319 PSMN045-80YS Product data sheet N-channel LFPAK mΩ standard level MOSFET Data sheet status Change notice ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN045-80YS © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN045-80YS Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 25 October 2010 Document identifier: PSMN045-80YS ...