PSMN1R8-30PL NXP Semiconductors, PSMN1R8-30PL Datasheet - Page 2

• Manufacturer Part Number: PSMN1R8-30PL
• Description: MOSFET,N CH,30V,10A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R8-30PL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN1R8-30PL
Product data sheet
Pin
1
2
3
mb
Type number
PSMN1R8-30PL
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 November 2010
Simplified outline
SOT78 (TO-220AB)
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
1 2
mb
3
Graphic symbol
PSMN1R8-30PL
mbb076
G
© NXP B.V. 2010. All rights reserved.
D
S
Version
SOT78
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