PSMN2R0-30PL NXP Semiconductors, PSMN2R0-30PL Datasheet - Page 4

• Manufacturer Part Number: PSMN2R0-30PL
• Description: MOSFET,N CH,30V,100A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R0-30PL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.7mohm
• Rds(on) Test Voltage Vgs: 20V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN2R0-30PL_1
Product data sheet
Symbol
R
Fig 3.
Fig 4.
th(j-mb)
Z
(K/W)
th (j-mb)
10
10
10
10
10
10
10
(A)
10
I
D
-1
-2
-3
-4
4
3
2
1
1
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
-6
δ = 0.5
0.2
0.1
0.05
0.02
single shot
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
10
-5
Limit R
Conditions
see
10
DSon
(1)
-4
Figure 4
= V
1
DS
/ I
D
Rev. 01 — 24 June 2009
10
-3
10
-2
DC
N-channel 30 V 2.1 mΩ logic level MOSFET
10
10
-1
PSMN2R0-30PL
Min
-
P
V
DS
1
Typ
0.41
(V)
t
100 μs
1 ms
10 ms
100 ms
p
10 μs
T
© NXP B.V. 2009. All rights reserved.
t
p
(s)
003aad295
003aad247
δ =
Max
0.71
t
T
p
t
10
10
2
Unit
K/W
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