PSMN2R0-30PL NXP Semiconductors, PSMN2R0-30PL Datasheet - Page 8

• Manufacturer Part Number: PSMN2R0-30PL
• Description: MOSFET,N CH,30V,100A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R0-30PL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.7mohm
• Rds(on) Test Voltage Vgs: 20V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN2R0-30PL_1
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
10
10
10
C
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
DS
003aaa508
003aad253
C
(V)
C
C
oss
iss
rss
10
Rev. 01 — 24 June 2009
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain
(A)
V
I
(V)
S
GS
100
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
voltage; typical values
0
0
N-channel 30 V 2.1 mΩ logic level MOSFET
T
j
= 175 °C
30
0.5
V
DS
= 12V
PSMN2R0-30PL
60
1
25 °C
90
1.5
© NXP B.V. 2009. All rights reserved.
Q
003aad255
003aad256
V
G
SD
(nC)
(V)
120
2
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