PSMN2R0-30PL NXP Semiconductors, PSMN2R0-30PL Datasheet - Page 7

• Manufacturer Part Number: PSMN2R0-30PL
• Description: MOSFET,N CH,30V,100A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R0-30PL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.7mohm
• Rds(on) Test Voltage Vgs: 20V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN2R0-30PL_1
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
10
10
10
10
10
10
(A)
a
I
1.5
0.5
D
-1
-2
-3
-4
-5
-6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
Sub-threshold drain current as a function of
0
0
min
1
60
typ
2
120
V
GS
003aab271
T
max
j
(V)
( ° C)
03aa27
180
3
Rev. 01 — 24 June 2009
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
R
V
(mΩ)
DSon
GS (th)
(V)
3
2
1
0
5
4
3
2
1
0
-60
junction temperature
of drain current; typical values
0
N-channel 30 V 2.1 mΩ logic level MOSFET
20
0
PSMN2R0-30PL
40
max
typ
min
3
60
V
GS
(V) =10 V
60
120
3.5
© NXP B.V. 2009. All rights reserved.
80
003aad250
003a a c982
T
5
I
j
D
(°C)
(A)
4
180
100
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