PBSS5612PA NXP Semiconductors, PBSS5612PA Datasheet

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PBSS5612PA

Manufacturer Part Number
PBSS5612PA
Description
TRANSISTOR,PNP,12V,6A,SOT1061
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS5612PA

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-12V
Power Dissipation Pd
2.1W
Dc Collector Current
-6A
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-1061
No. Of
RoHS Compliant
Dc Current Gain Hfe
335
Rohs Compliant
Yes
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PNP low V
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS4612PA.
Table 1.
[1]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS5612PA
12 V, 6 A PNP low V
Rev. 01 — 7 May 2010
Low collector-emitter saturation voltage V
High collector current capability I
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
Pulse test: t
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
CEsat
Quick reference data
p
≤ 300 μs; δ ≤ 0.02.
Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
CEsat
Conditions
open base
single pulse;
t
I
I
C
p
C
B
(BISS) transistor
≤ 1 ms
= −300 mA
= −6 A;
and I
CM
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
33
Product data sheet
Max
−12
−6
−7
50
Unit
V
A
A

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PBSS5612PA Summary of contents

Page 1

... PBSS5612PA PNP low V Rev. 01 — 7 May 2010 1. Product profile 1.1 General description PNP low V thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4612PA. 1.2 Features and benefits Low collector-emitter saturation voltage V High collector current capability I ...

Page 2

... T amb All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 PBSS5612PA PNP low V CEsat Simplified outline Graphic symbol Transparent top view Marking code A9 Min ...

Page 3

... Power derating curves Thermal characteristics Parameter thermal resistance from junction to ambient O , standard footprint All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 PBSS5612PA PNP low V CEsat Min - −55 −65 006aab978 25 75 125 175 T (°C) amb ...

Page 4

... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5612PA Product data sheet −3 −2 − −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 PBSS5612PA PNP low V (BISS) transistor CEsat 006aab979 (s) p 006aab980 ...

Page 5

... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5612PA Product data sheet −3 −2 − −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 PBSS5612PA PNP low V (BISS) transistor CEsat 006aab981 (s) p 006aab982 ...

Page 6

... −100 mA 100 MHz collector capacitance ≤ 300 μs; δ ≤ 0.02. p All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 PBSS5612PA PNP low V CEsat Min = −9 −9 −9 − −2 V [1] = − ...

Page 7

... I (mA) C Fig 7. 006aac098 −10 −10 − (mA) C Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 PBSS5612PA PNP low V CEsat −8 (mA) = − (A) −32 −6 −24 −4 −16 −8 −2 0 −1.0 −2.0 −3.0 0 °C T ...

Page 8

... C Fig 11. Collector-emitter saturation voltage as a 006aac102 −10 2 −10 3 − (mA) C Fig 13. Collector-emitter saturation resistance as a All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 PBSS5612PA PNP low V CEsat −1 V CEsat (V) −1 −10 (1) (2) −2 −10 (3) −3 −10 − ...

Page 9

... Fig 15. Test circuit for switching times PBSS5612PA Product data sheet (probe) oscilloscope 450 Ω − − −0 Bon All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 PBSS5612PA PNP low V CEsat − I (100 %) Bon − I Boff off (probe) o oscilloscope 450 Ω DUT mgd624 = 0 ...

Page 10

... Dimensions in mm Packing methods Description SOT1061 4 mm pitch tape and reel All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 PBSS5612PA PNP low V (BISS) transistor CEsat 0.65 max 0.45 2 0.35 2.1 1.1 1.9 ...

Page 11

... Reflow soldering is the only recommended soldering method. All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 PBSS5612PA PNP low V (BISS) transistor CEsat 2.1 1.3 0.5 (2×) 0.4 (2×) 0.5 (2×) 0.6 (2× ...

Page 12

... NXP Semiconductors 12. Revision history Table 9. Revision history Document ID Release date PBSS5612PA v.1 20100507 PBSS5612PA Product data sheet PNP low V Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 PBSS5612PA (BISS) transistor CEsat ...

Page 13

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 PBSS5612PA PNP low V (BISS) transistor CEsat © NXP B.V. 2010. All rights reserved. ...

Page 14

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 PBSS5612PA PNP low V (BISS) transistor CEsat © NXP B.V. 2010. All rights reserved ...

Page 15

... NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com (BISS) transistor CEsat All rights reserved. Date of release: 7 May 2010 Document identifier: PBSS5612PA ...

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