IXA12IF1200TC IXYS SEMICONDUCTOR, IXA12IF1200TC Datasheet - Page 5
IXA12IF1200TC
Manufacturer Part Number
IXA12IF1200TC
Description
IGBT,1200V,20A,TO-268AA
Manufacturer
IXYS SEMICONDUCTOR
Specifications of IXA12IF1200TC
Transistor Type
IGBT
Dc Collector Current
20A
Collector Emitter Voltage Vces
2.1V
Power Dissipation Max
85W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
TO-268AA
Rohs Compliant
Yes
Power Dissipation Pd
85W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
[A]
[A]
[mJ]
I
I
C
C
E
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
16
12
20
16
12
8
4
0
8
4
0
0
5
0
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
Fig. 3 Typ. tranfer characteristics
V
R
V
V
T
GE
CE
GE
VJ
G
T
6
= 15 V
= 100
VJ
= 125°C
= 600 V
= ±15 V
4
= 125°C
7
1
T
VJ
8
V
8
V
= 25°C
CE
I
C
GE
T
[A]
[V]
VJ
9
[V]
12
= 25°C
2
T
10 11 12 13
VJ
= 125°C
16
3
20
E
E
off
on
Data according to IEC 60747and per diode unless otherwise specified
[mJ]
E
[A]
V
I
[V]
C
GE
2.0
1.6
1.2
0.8
0.4
0.0
20
16
12
20
15
10
Fig. 6 Typ. switching energy vs. gate resistance
8
4
0
5
0
80
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
T
I
V
V
T
C
VJ
I
V
C
VJ
CE
GE
=
CE
= 125°C
= 125°C
= 600 V
= ±15 V
= 600 V
= 10 A
1
120
10 A
10
IXA12IF1200TC
V
GE
R
= 15 V
2
Q
160
V
17 V
19 V
G
G
CE
[Ω]
[nC]
20
[V]
3
200
preliminary
30
4
E
E
20110330a
11 V
13 V
9 V
on
off
240