IXA27IF1200HJ IXYS SEMICONDUCTOR, IXA27IF1200HJ Datasheet - Page 3

• Manufacturer Part Number: IXA27IF1200HJ
• Description: IGBT,1200V,43A,ISOPLUS247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA27IF1200HJ

• Transistor Type: IGBT
• Dc Collector Current: 43A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 150W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: ISOPLUS-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 150W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
T
T
R
Weight
F
V
d
d
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
C
VJ
stg
Package ISOPLUS247
S
A
thCH
ISOL
Date Code
UL listed
Order Code
Logo
Part No.
Product Marking
Isolation voltage
Creapage distance on surface
Striking distance through air
Definition
Virtual junction temperature
Storage temperature
Thermal resistance case to heatsink
Mounting force with clip
IXYS
abcd
Standard
Ordering
IXA 27 IF 1200 HJ
Part Name
Conditions
t = 1 second
t = 1 minute
Marking on Product
IXA27IF1200HJ
Data according to IEC 60747and per diode unless otherwise specified
Delivering Mode
Part number
1200
Base Qty Code Key
HJ
27
IF
X
A
I
=
=
=
=
=
=
=
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Copack
Reverse Voltage [V]
ISOPLUS247 (3)
IXA27IF1200HJ
min.
3600
3000
-55
-55
20
Ratings
typ.
0.25
6
max.
150
150
120
20100623b
Unit
K/W
mm
mm
°C
°C
N
V
V
g